A colleague pointed The SSD Guy to an ExtremeTech article about researchers at Japan’s Chuo University who have designed an SSD that uses a resistive RAM (ReRAM) as a buffer and is built using TSV technology. The design was presented at the IEEE’s 2012 Symposium on VLSI Circuits this month in Hawaii. A Nikkei article gives additional information.
The basic architecture reminds me of an FRAM + NAND SSD design that a Korean university presented at the Flash Memory Summit a few years ago. Either approach gets past the problem of using a failure-prone battery, a temperature-sensitive supercap, or a big bulky bank of Continue reading