At last week’s International Solid State Circuits Conference (ISSCC) Shuhei Tanakamaru, a researcher from Japan’s Chuo University, detailed a scheme to reduce MLC SSD bit error rates (BER) by 32 times over conventional techniques. The approach used an impressive combination of mirroring, vertical and horizontal error correction, and a deep understanding of the most likely kinds of bit errors flash will experience.
This is a very novel and well-conceived technique that may find industry adoption in future SSDs.
The steps included in the paper are used in addition to the Continue reading “Extreme SSD Error Correction”
A colleague pointed The SSD Guy to an ExtremeTech article about researchers at Japan’s Chuo University who have designed an SSD that uses a resistive RAM (ReRAM) as a buffer and is built using TSV technology. The design was presented at the IEEE’s 2012 Symposium on VLSI Circuits this month in Hawaii. A Nikkei article gives additional information.
The basic architecture reminds me of an FRAM + NAND SSD design that a Korean university presented at the Flash Memory Summit a few years ago. Either approach gets past the problem of using a failure-prone battery, a temperature-sensitive supercap, or a big bulky bank of Continue reading “An ReRAM SSD Design”